JPH0347588B2 - - Google Patents
Info
- Publication number
- JPH0347588B2 JPH0347588B2 JP58220515A JP22051583A JPH0347588B2 JP H0347588 B2 JPH0347588 B2 JP H0347588B2 JP 58220515 A JP58220515 A JP 58220515A JP 22051583 A JP22051583 A JP 22051583A JP H0347588 B2 JPH0347588 B2 JP H0347588B2
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- electrode
- oxide film
- groove
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58220515A JPS60113460A (ja) | 1983-11-25 | 1983-11-25 | ダイナミックメモリ素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58220515A JPS60113460A (ja) | 1983-11-25 | 1983-11-25 | ダイナミックメモリ素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60113460A JPS60113460A (ja) | 1985-06-19 |
JPH0347588B2 true JPH0347588B2 (en]) | 1991-07-19 |
Family
ID=16752224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58220515A Granted JPS60113460A (ja) | 1983-11-25 | 1983-11-25 | ダイナミックメモリ素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60113460A (en]) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5214496A (en) * | 1982-11-04 | 1993-05-25 | Hitachi, Ltd. | Semiconductor memory |
JPH07123158B2 (ja) * | 1984-03-26 | 1995-12-25 | 株式会社日立製作所 | 半導体装置の製造方法 |
JPH0815206B2 (ja) * | 1986-01-30 | 1996-02-14 | 三菱電機株式会社 | 半導体記憶装置 |
US5182227A (en) * | 1986-04-25 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
US6028346A (en) * | 1986-04-25 | 2000-02-22 | Mitsubishi Denki Kabushiki Kaisha | Isolated trench semiconductor device |
JPH0810755B2 (ja) * | 1986-10-22 | 1996-01-31 | 沖電気工業株式会社 | 半導体メモリの製造方法 |
KR100213189B1 (ko) * | 1992-06-11 | 1999-08-02 | 김광호 | 반도체메모리장치 및 그 제조방법 |
JP4890769B2 (ja) * | 2005-02-07 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643171U (en]) * | 1979-09-10 | 1981-04-20 | ||
JPS583260A (ja) * | 1981-06-29 | 1983-01-10 | Fujitsu Ltd | 竪型埋め込みキヤパシタ |
JPH065713B2 (ja) * | 1982-06-07 | 1994-01-19 | 日本電気株式会社 | 半導体集積回路装置 |
JPH0666436B2 (ja) * | 1983-04-15 | 1994-08-24 | 株式会社日立製作所 | 半導体集積回路装置 |
-
1983
- 1983-11-25 JP JP58220515A patent/JPS60113460A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60113460A (ja) | 1985-06-19 |
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